What is Industrial silicon? Industrial silicon, also known as Silicon metal, is a trade name that appeared in the mid-1960s. Silicon metal is a product of silica and carbonaceous reducing agent smelted in a geothermal furnace. The content of main component silicon is about 98% (In recent years,...Send Inquiry
What is Industrial silicon?
Industrial silicon, also known as Silicon metal, is a trade name that appeared in the mid-1960s. Silicon metal is a product of silica and carbonaceous reducing agent smelted in a geothermal furnace. The content of main component silicon is about 98% (In recent years, 99.99% of Si is also listed in metallic silicon). Other impurities For iron, aluminum, calcium and so on.
The use of Industrial silicon known as Silicon metal in semiconductors
Industrial silicon known as Silicon metal is an important semiconductor material, which can be made into diodes, transistors, thyristors, various integrated circuits (including chips and CPUs in people's computers), and can also be used as a solar photovoltaic cell to convert radiation energy into electrical energy. In 2012, China silicon metal suppliers has surpassed Europe and Japan to become the world's largest producer of solar cells.
Industrial silicon known as Silicon metal apply in different kinds of semiconductors
Infinition of semiconductors
A semiconductor device is an electronic device having conductivity between a good conductor and an insulator, which uses a particular electrical characteristic of the semiconductor material to perform a specific function and can be used to generate, control, receive, convert, amplify, and perform energy conversion.
The semiconductor material of the semiconductor device is silicon, germanium, or gallium arsenide and can be used as a rectifier, an oscillator, a light emitter, an amplifier, a photometer, and the like. In order to distinguish it from integrated circuits, it is sometimes referred to as a discrete device. The basic structure of most two-terminal devices (ie, crystal diodes) is a PN junction.
1.Indsutrial silicon known as silicon metal in Crystal diode
The basic structure of a crystal diode is a combination of a P-type semiconductor and an N-type semiconductor to form a PN junction. At the interface of the PN junction, a space-charged dipole layer is formed because holes in the P-type semiconductor and electrons in the N-type semiconductor diffuse toward each other. This dipole layer prevents the continued diffusion of holes and electrons and brings the PN junction into equilibrium. When the P-side of the PN junction (the P-type semiconductor side) is connected to the positive electrode of the power supply and the other end is connected to the negative electrode, both holes and electrons flow toward the dipole layer, making the dipole layer thinner, and the current rapidly rises. If the direction of the power supply is reversed, both holes and electrons flow away from the dipole layer and the dipole layer becomes thicker, while the current is limited to a very small saturation value (a reverse saturation current).
Therefore, the PN junction has unidirectional conductivity. In addition, the PN junction's dipole layer also acts as a capacitor, which changes as the applied voltage changes.
The electric field inside the dipole layer is very strong. When the applied reverse voltage reaches a certain threshold, avalanche breakdown occurs inside the dipole layer and the current suddenly increases by several orders of magnitude. Diodes made using these characteristics of PN junctions in various applications include: rectifier diodes, detection diodes, variable-frequency diodes, varactor diodes, switching diodes, zener diodes (Zener diodes), and collapsed diodes (collisional avalanche) The more diodes) and the capture diodes (capture plasma avalanche transit time diodes) and so on.
In addition, there are tunnel diodes that use the special effects of PN junctions, and schottky diodes and Gunn diodes that do not have PN junctions.
2.Indsutrial silicon known as silicon metal in Bipolar transistors
It consists of two PN structures, one of which is called an emitter junction and the other is a collector junction. A thin layer of semiconductor material between the two junctions is called the base region. The two electrodes connected to one end of the emitter junction and one end of the collector junction are called emitter and collector, respectively. The electrode on the base is called the base. In application, the emitter junction is forward biased and the collector is reverse biased.
A large number of minority carriers are injected into the base region by the current of the emitter junction. These minority carriers migrate to the collector junction by diffusion to form a collector current. Only a very small number of minority carriers recombine in the base region. Base current is formed. The ratio of the collector current to the base current is called the common emitter current amplification factor. In a common emitter circuit, a small change in the base current can control a large change in the collector current, which is the current amplification effect of the bipolar transistor. Bipolar transistors can be classified into NPN type and PNP type.
3.Indsutrial silicon known as silicon metal in Field effect transistor
It relies on a thin layer semiconductor to change its resistance (referred to as the field effect) due to the influence of the transverse electric field, so that it has the function of amplifying the signal. Two electrodes at both ends of this thin layer semiconductor are called source and drain. The electrodes that control the transverse electric field are called gates.
According to the gate structure, field effect transistors can be divided into three types:
1) junction type field effect tube (with PN structure into the gate);
2)MOS FET (Gate-metal-oxide-semiconductor gate, see metal-insulator-semiconductor system)
3) MES FET (metal and semiconductor contacts form the gate); MOS FETs are the most widely used. Especially in the development of large-scale integrated circuits, MOS large-scale integrated circuits have special advantages. MES FETs are typically used on GaAs microwave transistors.
On the basis of MOS devices, a charge-coupled device (CCD) has been developed, which uses charge stored near the surface of the semiconductor as information and controls potential wells near the surface to transfer charges near the surface in a certain direction. This device can usually be used as a delay line and memory, etc.; coupled with a photodiode array, can be used as a camera tube.
Packing:normally 1000kg per jumbo bag.Other packing ways for silicon metal is accepted.
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